Title of article
Impact of chlorine dissociation for modified chemical vapor deposition
Author/Authors
Cheung، نويسنده , , Catherine K.W. and Fletcher، نويسنده , , David F. and Barton، نويسنده , , Geoffrey W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
817
To page
820
Abstract
Modified chemical vapor deposition (MCVD) is the platform technology used to create a wide range of silica-based optical fibers. This paper reports on the extension of the reaction scheme embedded within a computational fluid dynamics model of the MCVD process to include chlorine dissociation and recombination. Simulations employing this modified kinetic scheme indicate that chlorine dissociation acts primarily as a ‘heat sink’ in cases where the operating conditions promote a high peak temperature in the narrow reaction zone where most of the SiCl4 oxidation occurs. The extended model allows a wider range of operating parameters to be examined in terms of the deposition profile of silica ‘soot’ particles on the substrate tube wall.
Keywords
chemical vapor deposition , Silica optical fiber , cfd modeling , Chlorine dissociation
Journal title
Journal of Non-Crystalline Solids
Serial Year
2009
Journal title
Journal of Non-Crystalline Solids
Record number
1381497
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