• Title of article

    Influence of the nitrogen flow rate on the order and structure of PECVD boron nitride thin films

  • Author/Authors

    Anutgan، نويسنده , , M. and Anutgan، نويسنده , , T. Aliyeva and Ozkol، نويسنده , , E. and Atilgan، نويسنده , , I. and Katircioglu، نويسنده , , B.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    8
  • From page
    1622
  • To page
    1629
  • Abstract
    Three sets of boron nitride (BN) thin films are deposited with different N2/B2H6 flow ratios (r = 4, 10 and 25) by plasma enhanced chemical vapor deposition (PECVD). The variations of physical properties in different deposition sets are analyzed by optical (XPS, FTIR, UV–visible spectroscopies), mechanical and electrical measurements. The films are considered to be deposited in a turbostratic phase (t-BN). Evolution of bonding configurations with increasing r is discussed. Relatively higher nitrogen flow rate in the source gas mixture results in lower deposition rates, whereas more ordered films, which tend to reach a unique virtual crystal of band gap 5.93 eV, are formed. Anisotropy in the film structure and film inhomogeneity along the PECVD electrode radial direction are investigated.
  • Keywords
    optical spectroscopy , infrared properties , XPS , FTIR measurements , Medium-range order , Amorphous semiconductors , III–V semiconductors , composition , Optical properties , ABSORPTION
  • Journal title
    Journal of Non-Crystalline Solids
  • Serial Year
    2009
  • Journal title
    Journal of Non-Crystalline Solids
  • Record number

    1381797