Role of Sb incorporation on the electrical and photoelectrical properties of Se-In glassy alloy

Amorphous thin films of Se90In10-xSbx (x = 0, 2, 4 and 6 at.%) have been prepared by vacuum evaporation technique. The dark and photo-conductivity measurements were carried out in all the thin films under study. Temperature dependence of conductivity in dark as well as in presence of light show that conduction is through a thermally activated process in both the cases. A discontinuity in various photoelectrical parameters is observed at 2 at.% of Sb concentration which could be correlated with average coordination number at this particular composition. The obtained results are explained on the basis of chemically ordered network model and the topological model.