The composition dependence of electrical switching behavior of Ge7Se93−xSbx glasses

Bulk Ge7Se93−xSbx (21 ⩽ x ⩽ 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge7Se93−xSbx glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current–voltage (I–V) characteristics. The observed threshold behavior of Ge7Se93−xSbx glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further, the high switching voltages and fluctuations in the I–V characteristics of Ge–Se–Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge7Se93−xSbx glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.