A study of absorption coefficient spectra in a-Si:H films near the transition from amorphous to crystalline phase measured by resonant photothermal bending spectroscopy

Optical absorption spectra of a widegap hydrogenated amorphous silicon film have been estimated by resonant photothermal bending spectroscopy. It is found that excess absorption exists over the photon energy region of 1.2–1.6 eV. This excess absorption decreases by light illumination and does not recover through thermal annealing. The decrease in the excess absorption may be due to oxidization of the film by light illumination.