Title of article
Excimer laser crystallization of microcrystalline silicon for TFTs on flexible substrate
Author/Authors
Pier، نويسنده , , Tanguy and Kandoussi، نويسنده , , Khalid and Simon، نويسنده , , Claude and Coulon، نويسنده , , Nathalie and Mohammed-Brahim، نويسنده , , Tayeb and Lhermite، نويسنده , , Hervé، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
5
From page
2300
To page
2304
Abstract
Microcrystalline silicon (μc-Si) films have been deposited on PDMS as well as on PEN substrate. Excimer laser annealing was used to improve the crystalline structure and so to obtain high mobility TFTs. The effect of the laser annealing on the crystalline structure of silicon films is studied using different characterization techniques and discussed. Mobility values of 60 cm2/V s with PDMS and 46 cm2/V s with PEN are obtained.
Keywords
Silicon , Thin film transistors
Journal title
Journal of Non-Crystalline Solids
Serial Year
2008
Journal title
Journal of Non-Crystalline Solids
Record number
1382777
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