Title of article
Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing
Author/Authors
Mai، نويسنده , , Y. and Verlaan، نويسنده , , V. and van der Werf، نويسنده , , C.H.M. and Houweling، نويسنده , , Z.S. and Bakker، نويسنده , , R. and Rath، نويسنده , , J.K. and Schropp، نويسنده , , R.E.I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
2372
To page
2375
Abstract
The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si–N, Si–H and N–H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios.
Keywords
Silicon , Photovoltaics , solar cells , Rutherford backscattering , chemical vapor deposition , FT-IR measurements
Journal title
Journal of Non-Crystalline Solids
Serial Year
2008
Journal title
Journal of Non-Crystalline Solids
Record number
1382792
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