Author/Authors :
Cheng، نويسنده , , Y. and Yan، نويسنده , , N. and Han، نويسنده , , X.D. and Zhang، نويسنده , , Z. and Zhang، نويسنده , , T. and Song، نويسنده , , Z.T. and Liu، نويسنده , , B. and Feng، نويسنده , , S.L.، نويسنده ,
Abstract :
Si2Sb2Te5 alloys have potential applications for future chalcogenide random access memory (C-RAM). The thermally induced crystallization process of Si2Sb2Te5 alloys was characterized by in situ heating experiments with transmission electron microscopy (TEM). The crystallization of a Si2Sb2Te5 amorphous film was initiated at around 160 °C, concomitant with a phase separation process. The crystallized product of the amorphous Si2Sb2Te5 film was a nano-scale (10 nm in local-domain size) composite material consisting of amorphous Si (a-Si), crystalline Sb2Te3 (c-Sb2Te3) and crystalline Te (c-Te).
