Author/Authors :
Castrucci، نويسنده , , Paola and Del Gobbo، نويسنده , , Silvano and Speiser، نويسنده , , Eugen and Scarselli، نويسنده , , Manuela and De Crescenzi، نويسنده , , Maurizio and Amiard، نويسنده , , Guillaume and Ronda، نويسنده , , Antoine and Berbezier، نويسنده , , Isabelle، نويسنده ,
Abstract :
Ge nanodots, produced by solid phase crystallization of amorphous Ge layers deposited at room temperature on SiO2 thermally grown on a Si(100) surface, generate a photocurrent in the visible and ultraviolet range. The photocurrent signal was detected by measuring the current flowing through the sample under irradiation either in planar or in up-down geometry. In both cases the quantum efficiency of the bare SiO2/Si(100) substrate was dramatically enhanced up to a factor of 103. Current–voltage curves were acquired in the latter geometry, evidencing an increase in the short circuit current induced by the Ge nanodots presence.
