Title of article :
Electrical switching behavior of amorphous Al23Te77 thin film sample
Author/Authors :
Das، نويسنده , , Chandasree and Lokesh، نويسنده , , R. and Rao، نويسنده , , G. Mohan and Asokan، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al–Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region.
Keywords :
Semiconductors , Electrical switching , Thin films
Journal title :
Journal of Non-Crystalline Solids
Journal title :
Journal of Non-Crystalline Solids