Charge carrier transport in solid state crystallized poly-Si films on glass

The influence of the used substrate and the deposition temperature, Td, of the amorphous starting material on the transport properties of solid state crystallized poly-Si is investigated. For poly-Si on a-SiNX:H coated borofloat glass a very small free-carrier concentration that is independent of Td is observed and charge transport is governed by intra-grain scattering mechanisms. For poly-Si on Corning glass the carrier concentration exhibits an inverted U shape as Td increases. These samples exhibit activated behavior of the Hall mobility that is consistent with thermionic carrier emission over potential barriers.