Author/Authors :
Xu، نويسنده , , Jun and Mu، نويسنده , , Weiwei and Xia، نويسنده , , Zhengyue and Sun، نويسنده , , Hongchen and Wei، نويسنده , , Deyuan and Li، نويسنده , , Wei and Ma، نويسنده , , Zhongyuan and Chen، نويسنده , , Kunji، نويسنده ,
Abstract :
Si quantum dots/SiO2 multilayers were prepared by annealing a-Si:H/SiO2 stacked structures at 1100 °C . Photo- and electro-luminescence band around 750 nm can be observed from Si QDs/SiO2 multilayers due to the recombination of electron-hole pairs in Si QDs/SiO2 interfaces. The electro-luminescence intensity was obviously enhanced after post hydrogen annealing at 400 °C. Electron spin resonance measurements were used to characterize the change of the defect states after hydrogen annealing. It is found that there exists a-centers (g value = 2.006), which is related to the Si dangling bonds in Si QDs in our samples. Hydrogen annealing can significantly reduce non-luminescent a-centers and enhance the electro-luminescence intensity consequently.
