Films thickness effect on structural and optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H)

Thin films of hydrogenated amorphous germanium (a-Ge:H) deposited at high growth rate by radiofrequency (RF) glow discharge with 1 sccm GeH4 diluted in 40 sccm H2 have been studied. The effect of the films thicknesses on the defect density and on the structural parameters was carefully investigated by means of infrared spectroscopy, optical transmission measurements, and the photothermal deflection spectroscopy (PDS) technique. The results of this investigation show that when the films thicknesses increase, the total hydrogen content (CH) decreases and the hydrogen-bonding configuration changes. The results of these changes appear clearly on the defects density and on the microstructure parameter of the films, while the disorder parameter EOV and the optical gap ET remain practically constant (EOV ≈ 45 ± 2 meV, ET = 1.08 ± 0.02 eV). The improvement of these parameters is mainly due to the incorporation of the hydrogen in the bulk of the material as the monohydride groups (Ge-H) rather than the polyhydride groups (Ge-H2 and Ge-H2n) when the films thicknesses increase.