Title of article
Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)–arsenic selenide (As2Se3) multi-layered thin film
Author/Authors
Saito، نويسنده , , I. and Masuzawa، نويسنده , , T. and Kudo، نويسنده , , Y. and Pittner، نويسنده , , S. Narita-Yamada، نويسنده , , T. and Koh، نويسنده , , A.T.T. and Chua، نويسنده , , D.H.C. and Mori، نويسنده , , Y. and Zahn، نويسنده , , D.R.T. and Amaratunga، نويسنده , , G.A.J. and Okano، نويسنده , , K.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
5
From page
96
To page
100
Abstract
A mille-feuille structured amorphous selenium (a-Se)–arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se–As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105° of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors.
Keywords
Nano-layer , Amorphous , Photoconductor , Photoelectric materials
Journal title
Journal of Non-Crystalline Solids
Serial Year
2013
Journal title
Journal of Non-Crystalline Solids
Record number
1384565
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