Title of article
Study on GeGaSbTe film for long data retention phase change memory application
Author/Authors
Zhang، نويسنده , , Zhonghua and Song، نويسنده , , Sannian and Song، نويسنده , , Zhitang and Cheng، نويسنده , , Yan and Gu، نويسنده , , Yifeng and Wu، نويسنده , , Liangcai and Liu، نويسنده , , Bo and Feng، نويسنده , , Songlin، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
4
From page
54
To page
57
Abstract
In this paper, Ga0.6Ge2.8Sb2.6Te4 film was investigated for long data retention phase change memory application. Compared with Ge2Sb2Te5, Ga0.6Ge2.8Sb2.6Te4 film has higher crystallization temperatures (~ 240 °C) and larger crystallization activation energy (~ 2.9 eV), which lead to a higher temperature (~ 135 °C) for ten year data retention. The reversible phase change can be realized by a 100-ns width electric pulse. Ga0.6Ge2.8Sb2.6Te4 based cell shows good endurance up to 1.05 × 105 SET–RESET cycles during endurance test.
Keywords
A. Phase change material , D. Electrical properties , D. Data retention
Journal title
Journal of Non-Crystalline Solids
Serial Year
2013
Journal title
Journal of Non-Crystalline Solids
Record number
1384788
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