Microstructural development of silicon nitride with aligned β-Si3N4 whiskers

Silicon nitride was sintered with 3 wt.% silicon nitride whiskers that were aligned using tape casting. Sintering was carried out at temperatures between 1550 and 1850°C for 1 h. The α to β phase transformation was complete at 1750°C. XRD results also showed that the amount of β-phase grains in the matrix increased faster than growth rate of the whisker grains at the early stage of sintering. The intensities of the peaks diffracted from the whisker grains increased faster than those diffracted from the matrix β-phase grains after the α to β phase transformation was complete. Both XRD results and the etched microstructures indicated that the whisker grains grew preferentially in the length direction.