The temperature dependence of the Youngʹs modulus of MgSiN2, AlN and Si3N4

The temperature dependence of the Youngʹs modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with E=E0−B·T exp−T0T. The values of the fitting parameters E0 and T0 are related to the Debye temperature, and the parameter B to the harmonic character of the bond.