Title of article :
Electrical properties of donor- and acceptor-doped BaBi4Ti4O15
Author/Authors :
Irena Pribosic، نويسنده , , Irena and Makovec، نويسنده , , Darko and Drofenik، نويسنده , , Miha، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
1327
To page :
1331
Abstract :
The electrical properties of the BaBi4Ti4O15 compound, a member of the family of Aurivillius bismuth-based layer-structure perovskites, have been studied as a function of aliovalent doping and processing conditions. The samples were prepared by reaction sintering or hot forging of a mixture of BaTiO3 and Bi4Ti3O12 with Nb substituted for Ti, as a donor dopant, and Fe as an acceptor. The dielectric constant of BaBi4Ti4O15 is increased by both dopants. Nb doping decreases the Curie temperature, while Fe doping increases it. The conductivity of BaBi4Ti4O15 is p-type and it is decreased by Nb doping and increased by Fe doping. The incorporation of aliovalent dopants into the BaBi4Ti4O15 structure, is however, preferentially compensated by the change in the composition of the compound.
Keywords :
BaTiO3 , HOT PRESSING , titanates , dielectric properties , Electrical properties
Journal title :
Journal of the European Ceramic Society
Serial Year :
2001
Journal title :
Journal of the European Ceramic Society
Record number :
1405189
Link To Document :
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