Preparation and properties of Al1–xTixN solid solution thin films by multiple cathode sputtering

Al1–xTixN solid solution thin films were deposited by reactive sputtering of a multi-metal target. A wurtzite-type solid solution was obtained in x=0–0.3, and an NaCl-type solid solution was obtained in x=0.4–1.0. Optical and electrical properties varied with composition x. The binding energies of Ti2p, Al2p and N1s from XPS spectra shifted remarkably between x=0.3 and 0.4. The improvement of the oxidation resistance of the Al substituted TiN films and aluminum-rich oxide formation near the film surface was observed by XPS depth profiles.