Piezoelectric effect in RF sputtered ferroelectric thin films

Thin ferroelectric films of BaTiO3, LiNbO3, and Pb(Zr0.53Ti0.45W0.01Cd0.01)O3 have been grown on different substrates. Processing conditions for the thin film preparation by RF sputtering were optimised to assure the composition transfer between the target and the thin film. Structure of the films was investigated by X-ray diffraction. The basic dielectric and piezoelectric properties were studied and the processing-structure perfection–property relationships of oxide thin films have been revealed. The piezoelectric charge coefficient d33 was determined. Self-induced polarisation of the thin films as well as stress-induced polarisation ascribed to reversible displacement of 90° domain walls was taken into account to explain experimental results.