Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 thin films measured by Fourier transform infrared spectroscopy

We report the far infrared measurement for comparing the dielectric properties of Bi2(Zn1/3Nb2/3)2O7, BiZN, thin films and bulk ceramics. The dielectric constants obtained by extrapolating the IR properties to the microwave frequency region for the thin films (ε1)film=20 is markedly smaller than those for bulk ceramics. The frequency response, measured by Fourier transform infrared spectroscopy (FTIR), reveals that the phonon peaks of BiZN thin films occur at higher frequencies and have smaller amplitudes, as compared to those of BiZN bulk. This phenomenon implies that the smaller dielectric constant for BiZN thin films is due to the strain induced in the thin films.