Title of article :
Mechanical spectroscopy connected to creep and stress relaxation in a high resistant silicon nitride
Author/Authors :
Testu، نويسنده , , S and Schaller، نويسنده , , R and Besson، نويسنده , , J.L and Rouxel، نويسنده , , T and Bernard-Granger، نويسنده , , G، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
6
From page :
2511
To page :
2516
Abstract :
Silicon nitride processed by gas pressure sintering contains a very small amount of glassy phase and consequently exhibits a strong resistance to deformation until 1450 °C. Above this temperature, both relaxation kinetics and creep rate rapidly increase. To explain such a behaviour, the formation of a liquid phase by dissolution of YSiAlON phases was proposed. The present paper shows that mechanical spectroscopy argues for the existence of such a liquid phase at high temperature. The mechanical loss is very low in the as-sintered material. Nevertheless, the internal friction peak generally observed in silicon nitride, and attributed to the glass transition in the glassy pockets, is also observed in the gas pressure sintered silicon nitride. Moreover, the peak is much higher in annealed and “quenched” specimens and it increases with annealing time. These results show that the annealed and “quenched” material contains much more glassy phase and so argues for the dissolution of crystalline phases at high temperature.
Keywords :
Creep , Grain boundaries , Si3N4 , Sintering , Mechanical spectroscopy
Journal title :
Journal of the European Ceramic Society
Serial Year :
2002
Journal title :
Journal of the European Ceramic Society
Record number :
1406288
Link To Document :
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