CeO2 epitaxial films by spray MOD

Dense films of CeO2 have been epitaxially grown on bi-axially textured Ni tape from a spray MOD technique. Ce-2-ethylhexanoate in toluene solution has been used as a precursor. This carboxylic precursor is ultrasonically sprayed in a specially designed machine allowing the tape to be covered to move. After drying, the film is converted to the oxide above 600 °C in reducing atmosphere, avoiding oxidation of the Ni substrate. The ceramic film is densified at 900 °C (grain size 90 nm) and it grows epitaxially on the substrate. The thickness of the film is determined from IR reflectivity to be 87 nm in agreement with SEM. This continuous process could be easily scaled up.