Non-linear piezoelectric properties of the thin Pb(ZrxTi1−x)O3 (PZT) films deposited on the Si-substrate

In this paper some non-linear piezoelectric properties are investigated in lead zirconate-titanate Pb(ZrxTi1−x)O3 (PZT) thin films, sputtered on the Si/SiO2/Ti/Pt substrates. The thin PZT films were optimised by technology conditions (sputtering (ZrxTi1−x) composition, PZT film thickness, buffer and seeding layers thickness). The significant piezoelectric response for PZT (60/40) and near MPB PZT (54/46) rhombohedral compositions, (1 1 1) and (0 0 1) orientations and thickness of 1.02–2.2 μm has been observed. The effective piezoelectric coefficient d33 = 225 pC/N was found for high electric field of 10 MV/m and PZT (60/40) composition. The non-linear piezoelectric response, depending on electric field, frequency and temperature, was studied experimentally using an original double-beam laser interferometer and an optical cryostat. The temperature dependence of the thickness strain was investigated by laser interferometer in the temperature range −33 to 57 °C. (ZrxTi1−x)O3-Si/SiO2/Ti/Pt samples were prepared in the University of Valenciennes (France), and measured in the Laboratory of laser interferometry at the Technical University of Liberec (Czech Republic).