Improvement of composite sol–gel process for manufacturing 40 μm piezoelectric thick films

In this study, high performance piezoelectric thick films were prepared by depositing only a few sol–gel infiltrated composite layers on Si/SiO2/Ti/Pt wafers. Lead zirconate titanate (PZT) powder, binder and infiltration sol were synthesised from the same-laboratory made time-stable polymeric PZT sol. Adding coarse powder (50 wt%) to the sol precursor, crack-free coatings were prepared by dip coating in the 30–50 μm thickness range in only 3–6 layers. The results showed that good performance can be achieved by controlling sol concentration, powder charge, composite sol ageing, number of infiltrations and heat treatments. The initial results showed that only a limited number of infiltrations are needed in the final stack to obtain high piezoelectric performance. For instance, a 40 μm thick film was prepared with 6 composite layers with a 0.7 M PZT sol charged with 50 wt% PZT powder after 2 months’ ageing. Poling was performed for 5 min under 15 V/μm in an oil bath at 170 °C after 5 infiltrations and final annealing at 700 °C for 10 min in RTA. Despite substrate clamping, this coating reached an effective thickness coupling factor up of to 39% at a resonance frequency of 30 MHz. This result was obtained with a non-doped PZT powder.