• Title of article

    Highly sensitive MISFET sensors with porous Pt–SnO2 gate electrode for CO gas sensing applications

  • Author/Authors

    Fukuda ، نويسنده , , Hisashi and Kasama، نويسنده , , Kouichiro and Nomura، نويسنده , , Shigeru، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    6
  • From page
    163
  • To page
    168
  • Abstract
    Novel devices based on a porous Pt–SnO2 metal–insulator–semiconductor field-effect transistor (MISFET) for carbon monoxide (CO) gas sensing have been proposed. The structure integrates the catalytic properties of porous Pt, a thin catalytic layer, and the spillover effect onto SnO2, a gas adsorptive oxide, with surface-sensitive MISFETs. The operation characteristics of the device for the detection of CO gas are presented as a function of CO gas concentration and operating temperature. The threshold voltage decreased rapidly with time when the device was exposed to CO gas depending on the operating temperature. It was possible to detect 54 ppm of CO gas with a response time of less than 1 min at 27°C. A model was proposed to explain the operation. The proposed sensing mechanism of the device is supported well by experimental data.
  • Keywords
    Gas sensor , Metal–insulator–semiconductor structure , MISFETsstructure , Tin oxide , Platinum
  • Journal title
    Sensors and Actuators B: Chemical
  • Serial Year
    2000
  • Journal title
    Sensors and Actuators B: Chemical
  • Record number

    1410716