Title of article
The effect of dopants on the electronic structure of SnO2 thin film
Author/Authors
Liu، نويسنده , , Wei and Cao، نويسنده , , Xiaoping and Zhu، نويسنده , , Yongfa and Cao، نويسنده , , Lili، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
219
To page
221
Abstract
In this paper, the structure of SnO2 thin films doped with Pd, Sb, Pt and In, especially the effects of dopants on the electronic structure of SnO2 were studied by XPS and TEM. It was observed that the dopants not only changed the Fermi level but also influenced the distribution of electron state density (DESD) of Sn4d valence band. We also studied the electronic structure change of the doped SnO2 after H2 adsorption.
Keywords
Electronic structure , Dopants , SnO2
Journal title
Sensors and Actuators B: Chemical
Serial Year
2000
Journal title
Sensors and Actuators B: Chemical
Record number
1411120
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