• Title of article

    Influence of point defects in KTaO3 on low-temperature dielectric relaxation

  • Author/Authors

    Axelsson، نويسنده , , Anna-Karin and Valant، نويسنده , , Matjaz and Alford، نويسنده , , Neil McN.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    6
  • From page
    941
  • To page
    946
  • Abstract
    Substituted KTaO3 ceramics were synthesized, sintered and studied using low-temperature microwave dielectric analysis and Raman spectroscopy. Because of a fundamentally different nature of aliovalent Mn- and isovalent Na-substitution mechanisms, significant differences in processing and dielectric properties were identified. The properties were correlated to the defect structure of the substituted KTaO3 lattices. Characteristics of the induced polar domains were clearly different for the two substitutional mechanisms, which further reflects in a significantly different dielectric behavior. Linear response of changes in the Raman spectra corresponds to evidence of the formation of symmetry-breaking regions.
  • Keywords
    Defects , dielectric properties , Ferroelectric properties , Tantalates , Polar domains
  • Journal title
    Journal of the European Ceramic Society
  • Serial Year
    2010
  • Journal title
    Journal of the European Ceramic Society
  • Record number

    1411448