Title of article
Influence of point defects in KTaO3 on low-temperature dielectric relaxation
Author/Authors
Axelsson، نويسنده , , Anna-Karin and Valant، نويسنده , , Matjaz and Alford، نويسنده , , Neil McN.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
6
From page
941
To page
946
Abstract
Substituted KTaO3 ceramics were synthesized, sintered and studied using low-temperature microwave dielectric analysis and Raman spectroscopy. Because of a fundamentally different nature of aliovalent Mn- and isovalent Na-substitution mechanisms, significant differences in processing and dielectric properties were identified. The properties were correlated to the defect structure of the substituted KTaO3 lattices. Characteristics of the induced polar domains were clearly different for the two substitutional mechanisms, which further reflects in a significantly different dielectric behavior. Linear response of changes in the Raman spectra corresponds to evidence of the formation of symmetry-breaking regions.
Keywords
Defects , dielectric properties , Ferroelectric properties , Tantalates , Polar domains
Journal title
Journal of the European Ceramic Society
Serial Year
2010
Journal title
Journal of the European Ceramic Society
Record number
1411448
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