Phthalocyanine-based field-effect transistor as ozone sensor

In this paper, we present a new sensor, which exhibits a sensitivity to ozone to less than 10 ppb. The device is a phthalocyanine-based field-effect transistor which is capable of working at room temperature. We describe a dynamic procedure, working out of the equilibrium state, to get rid of drift phenomena. A process where 2 min exposure alternates with 8 min static rest period leads, after a conditioning period, to a stable and reproducible signal. The response of the device (55 pA ppb−1 min−1) is linearly correlated to the ozone concentration in air, in the range 0–150 ppb. The use of a dynamic rest (flow of ozone free air) instead of a static rest reduces the duration of the recovery period, but is not necessary to achieve a good reproducibility.