Nanoscale elastic–plastic deformation and stress distributions of the C plane of sapphire single crystal during nanoindentation

The nanoscale elastic–plastic characteristics of the C plane of sapphire single crystal were studied by ultra-low nanoindentation loads with a Berkovich indenter within the indentation depth less than 60 nm. The smaller the loading rate is, the greater the corresponding critical pop-in loads and the width of pop-in extension become. It is shown that hardness obviously exhibits the indentation size effect (ISE), which is 46.7 ± 15 GPa at the ISE region and is equal to 27.5 ± 2 GPa at the non-ISE region. The indentation modulus of the C plane decreases with increasing the indentation depth and equals 420.6 ± 20 GPa at the steady-state when the indentation depth exceeds 60 nm. Based on the Schmidt law, Hertzian contact theory and crystallography, the possibilities of activation of primary slip systems indented on the C surface and the distributions of critical resolved shear stresses on the slip plane were analyzed.