Title of article :
Ion-selective light-addressable potentiometric sensor (LAPS) with chalcogenide thin film prepared by pulsed laser deposition
Author/Authors :
Mourzina، نويسنده , , Y. and Yoshinobu، نويسنده , , T. and Schubert، نويسنده , , J. and Lüth، نويسنده , , H. and Iwasaki، نويسنده , , H. and Schِning، نويسنده , , M.J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
136
To page :
140
Abstract :
Pb–Ag–As–I–S chalcogenide glass was deposited on the surface of a light-addressable potentiometric sensor (LAPS) by means of the pulsed laser beam deposition (PLD) technique. The deposited layer worked as a Pb2+-ion-sensitive transducer, and the sensor showed Nernstian response with a sensitivity of 29±1 mV/decade. The detection limit of the sensor for Pb2+-ions was 1×10−6 mol/l. The response time does not exceed 50 s for Pb2+-ion concentrations higher than 1×10−3 mol/l, while for lower concentration range the response time increases up to 3–5 min.
Keywords :
Pulsed laser deposition (PLD) , Lead sensitivity , Chemical sensor , Light-addressable potentiometric sensor (LAPS) , Chalcogenide glass
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2001
Journal title :
Sensors and Actuators B: Chemical
Record number :
1412816
Link To Document :
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