Development of a silicon-based yttria-stabilized-zirconia (YSZ), amperometric oxygen sensor

A silicon-based yttria-stabilized-zirconia (YSZ) amperometric oxygen sensor with a cross-bridge structure has been developed. It is a planar type sensor with interdigitated electrodes and integrated with thermal elements. Its sensing area of 380 μm×240 μm is a substantial reduction in size from current sensors. Its thermal shock resistance is maximised by selecting an appropriate thickness of the sandwich structure and a minimum local annealing temperature. The sensor response to oxygen begins from 450 °C and reaches its operation range between 560 and 611 °C. Annealing at a temperature approximately 10% higher than the maximum operation temperature appears to enhance the thermal stability of the sensor.