Title of article :
A new SiC/HfB2 based low power gas sensor
Author/Authors :
Solzbacher، نويسنده , , F and Imawan، نويسنده , , C and Steffes، نويسنده , , H and Obermeier، نويسنده , , E and Eickhoff، نويسنده , , M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
5
From page :
111
To page :
115
Abstract :
A new SiC-based heated micro gas sensor with a 100 μm×100 μm heated membrane and excellent heater long-term stability is presented. Combining a previously presented micro hotplate with new gas sensitive (2 1 1) oriented In2O3 thin film layers yields a very stable low power NO2 gas sensor. The modular design allows its operation at operating voltages of either 1–2 or 12–24 V for battery and grid powered automotive applications. A total of 20 mW of power is sufficient for the operation at 250°C. The sensitivity and signal reproducibility in the MAK-range (5 ppm, maximum workplace concentration according to German federal law) is good. The response time τ50=50 s needs improvement.
Keywords :
Gas sensors , Micro hotplate , SiC , indium oxide , HfB2
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2001
Journal title :
Sensors and Actuators B: Chemical
Record number :
1415138
Link To Document :
بازگشت