Title of article
A resistive gas sensor with elimination and utilization of parasitic electric fields
Author/Authors
Storm، نويسنده , , U and Bartels، نويسنده , , O and Binder، نويسنده , , J، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
529
To page
533
Abstract
Resistive gas sensors on silicon substrates consist of a stack of several thin layers. Therefore, high electric fields result between the buried heater and the near sensitive layer and its contacts. These fields pervade the thin sensitive layer and affect the sensor response. This paper presents a special sensor substrate which was developed to control this cross effect. Electric fields across the sensing layer can be avoided and, furthermore, they can be homogeneously applied. The experimental results of a tin oxide gas sensor show, that the sensitivity towards nitrogen oxide can be improved by external electric fields. In conclusion, suggestions are made to implement this feature for innovative gas sensors with micro-hot plates.
Keywords
Tin oxide , MOS-FET , Electric field , Silicon substrate , Selectivity
Journal title
Sensors and Actuators B: Chemical
Serial Year
2001
Journal title
Sensors and Actuators B: Chemical
Record number
1415296
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