Micro- and nanopatterning of sensor chips by means of macroporous silicon

In this contribution, the authors present a novel technique to prepare new three-dimensional porous silicon layers. The base material is n-type Si with a thickness of 60 μm. The preparation of the new microstructures is an one-step process. Hence, it should be possible to adopt this technique in up-to-date sensor fabrication processes to enhance the properties of the sensors. As Jeske et al. [Surf. Interface Anal. 22 (1994) 363.] showed, p-type silicon can also be utilised as substrate material for the formation of porous silicon layers to be filled up with sensing components. In upcoming experiments it is tried to tailor this process also to p-type silicon substrates. First deposition experiments with Ni-P were carried out to characterize the deposits on the porous silicon samples.