Title of article
Low voltage episide down bonded mid-IR diode optopairs for gas sensing in the 3.3–4.3 μm spectral range
Author/Authors
M.A. Remennyi، نويسنده , , M.A. and Zotova، نويسنده , , N.V. and Karandashev، نويسنده , , S.A. and Matveev، نويسنده , , B.A. and Stus’، نويسنده , , N.M. and Talalakin، نويسنده , , G.N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
6
From page
256
To page
261
Abstract
We describe “flip chip bonded” In(Ga)As and InAsSb heterostructure photodiodes and light emitting diodes (LEDs) (λ=3.3–4.3 μm) grown onto n-InAs substrate. The advantages of the construction include the possibility of coupling with immersion lenses through the contact free surface. The report presents I–V characteristic, spectral emission and responsivity, and simulations of sensitivity of the optically coupled diode pair to methane and carbon dioxide gases.
Keywords
Mid-infrared photodiodes , IR sensing , detector , IR diode optopairs
Journal title
Sensors and Actuators B: Chemical
Serial Year
2003
Journal title
Sensors and Actuators B: Chemical
Record number
1417388
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