Author/Authors :
Sen، نويسنده , , Shashwati and Bhandarkar، نويسنده , , Vinit and Muthe، نويسنده , , K.P. and Roy، نويسنده , , M. and Deshpande، نويسنده , , S.K. and Aiyer، نويسنده , , R.C. and Gupta، نويسنده , , S.K. and Yakhmi، نويسنده , , J.V. and Sahni، نويسنده , , V.C.، نويسنده ,
Abstract :
Tellurium thin films have been investigated for use as hydrogen sulphide gas sensors. The films were prepared by thermal evaporation on alumina substrates at a temperature of 373 K and were found to be sensitive towards 0.1 ppm of H2S at room temperature. The response was reproducible and the films were stable for operation over 3 months. Detection mechanism of the sensors was investigated and it was found that hydrogen sulphide reduced the amount of adsorbed oxygen on the Te film surface leading to increase in resistance.
Keywords :
Grain boundaries , Thin films , Semiconductor , Sensors
