Author/Authors :
Elizabeth Spannhake، نويسنده , , J. and Helwig، نويسنده , , A. and Müller، نويسنده , , G. and Faglia، نويسنده , , G. and Sberveglieri، نويسنده , , G. and Doll، نويسنده , , T. and Wassner، نويسنده , , T. and Eickhoff، نويسنده , , M.، نويسنده ,
Abstract :
MEMS micro heater devices capable of long-term operation at temperatures up to 1000 °C are presented. The enhanced long-term stability has been achieved by employing antimony-doped tin oxide (SnO2:Sb) as a substitute for the conventionally used noble metal heater resistors. A detailed investigation of its high-temperature stability reveals that degradation is caused by out-diffusion of Sb impurities from the SnO2 film.
Keywords :
Antimony-doped tin oxide , MEMS heater devices , Thermal IR emitter , High-temperature applications , High-temperature heater materials
