Author/Authors :
Chen، نويسنده , , K.H. and Wang، نويسنده , , H.W. and Kang، نويسنده , , B.S. and Chang، نويسنده , , C.Y. and Wang، نويسنده , , Y.L. and Lele، نويسنده , , T.P. and Ren، نويسنده , , F. and Pearton، نويسنده , , S.J. and Dabiran، نويسنده , , A. and Osinsky، نويسنده , , A. and Chow، نويسنده , , P.P.، نويسنده ,
Abstract :
Thioglycolic acid functionalized Au-gated AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect mercury(II) ions. The drain current of the HEMT sensors monotonically increased with the mercury(II) ion concentration from 1.5 × 10−8 to 4 × 10−8 M. The drain current reached equilibrium around 15–20 s after the concentrated Hg ion solution added to the gate area of the HEMT sensors. The effectiveness of the thioglycolic acid functionalization was evaluated with a surface contact angle study. The results suggest that portable, fast response, and wireless-based heavy metal ion detectors can be realized with AlGaN/GaN HEMT-based sensors.
Keywords :
Mercury ion sensor , Hg2+ , Thioglycolic acid , HEMT
