Title of article
Temperature characterization of silicon substrates for gas sensors by Raman spectroscopy
Author/Authors
Helwig، نويسنده , , Andreas and Spannhake، نويسنده , , Jan and Müller، نويسنده , , Gerhard and Rosman، نويسنده , , Noel and Pagnier، نويسنده , , Thierry، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
240
To page
244
Abstract
The local temperature of three silicon-based hotplate sensor designs has been measured by looking at the Raman band wavenumber of Si. Characteristic temperature/applied voltage curves have been drawn. The accuracy of the method has been estimated to be better than 10 K. For a given applied voltage, temperature differences were observed depending on the measurement point. These differences were always lower than 20 K for a temperature of 800 K.
Keywords
Silicon temperature , Gas sensor substrate , Raman spectroscopy
Journal title
Sensors and Actuators B: Chemical
Serial Year
2007
Journal title
Sensors and Actuators B: Chemical
Record number
1436917
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