Modeling of the inter-granular energy-barrier height in very-fine nanograins through a semi-classical approach

Modeling of the electron charge distribution for very fine nanograins (≈1 nm) has been addressed via a semi-classical method such as the Thomas–Fermi approximation. This method takes into account quantum effects of electron confinement within a nanograin and allows one to calculate the height of the inter-grain energy barrier, which is a physical quantity that determines the conductive properties of semiconductor metal-oxides. Comparison with non-quantum models and with experimental measurements is given.