AlInN resistive ammonia gas sensors

We report the growth of AlInN epitaxial layer and the fabrication of AlInN resistive NH3 gas sensor. It was found that surface morphology of the AlInN was rough with quantum dot like nano-islands. It was also found that the conductance of these AlInN nano-islands increased as NH3 gas was introduced into the test chamber. At 350 °C, it was found that measured incremental currents were around 105, 127, 147 and 157 μA when concentration of the injected NH3 gas was 500, 1000, 2000 and 4000 ppm, respectively.