Title of article
Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes
Author/Authors
Wang، نويسنده , , Yu-Lin and Chu، نويسنده , , B.H. and Chang، نويسنده , , C.Y. and Chen، نويسنده , , K.H. and Zhang، نويسنده , , Y. and Sun، نويسنده , , Q. and Han، نويسنده , , J. and Pearton، نويسنده , , S.J. and Ren، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
175
To page
178
Abstract
N-polar and Ga-polar GaN grown on c-plane sapphire were used to fabricate platinum deposited Schottky contacts for hydrogen sensing at room temperature. After exposure to hydrogen, Ga-polar GaN Schottky barrier reduced by 3–4 meV, while the N-polar GaN Schottky contacts became fully Ohmic. The N-polar GaN Schottky diodes showed stronger and faster response to 4% hydrogen than that of Ga-polar Schottky diodes. The abrupt current increase from N-polar GaN Schottky exposure to hydrogen was attributed to the high reactivity of the N-face surface termination. The surface termination dominates the sensitivity and response time of the hydrogen sensors made of GaN Schottky diodes.
Keywords
Ga-face GaN , N-face GaN , Hydrogen sensors , GaN Schottky diodes , N-polar GaN , Ga-polar GaN
Journal title
Sensors and Actuators B: Chemical
Serial Year
2009
Journal title
Sensors and Actuators B: Chemical
Record number
1437789
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