Title of article
MOS device chemical response reversal with temperature
Author/Authors
Lombardi، نويسنده , , Rina and Aragَn، نويسنده , , Ricardo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
5
From page
457
To page
461
Abstract
Biased above threshold (VT), pulsed photocurrent (u) measurements on windowed silicon Pd gate MOS capacitors are shifted (ΔV) negatively by H2/N2, whereas Au gates shift positively under NO2/air. Below VT, the shifts are reversed by adjustments of interface state population. Minor temperature increases may coax the device from inversion to depletion, inducing sign reversal of the chemical response.
Keywords
MOS capacitors , Chemical sensitivity , Response reversal , threshold voltage
Journal title
Sensors and Actuators B: Chemical
Serial Year
2010
Journal title
Sensors and Actuators B: Chemical
Record number
1437813
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