Title of article :
Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors
Author/Authors :
Wang، نويسنده , , Yu-Lin and Chu، نويسنده , , B.H. and Chang، نويسنده , , C.Y. and Lo، نويسنده , , C.F. and Pearton، نويسنده , , S.J. and Dabiran، نويسنده , , A. and Chow، نويسنده , , P.P. and Ren، نويسنده , , F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
4
From page :
349
To page :
352
Abstract :
The long-term stability of antibody-functionalized, Au-gated AlGaN/GaN high electron mobility transistors for detecting botulinum toxin is reported in this study. The botulinum toxin sensor, which initially showed good data reproducibility and recyclability, was repeatedly tested over a 9-month period. The botulinum sensor was packaged and stored in phosphate buffered saline (PBS) at 4 °C in a refrigerator for long-term storage. The sensor was tested over time at room temperature and we found sensitivity losses of 2%, 12% and 28% after 3, 6 and 9 months, respectively. These results clearly demonstrate a significant step towards the realization of electronic detection of biomolecules by field-deployed sensor chips based on AlGaN/GaN HEMTs.
Keywords :
Sensor stability , Immuno sensor stability , AlGaN/GaN HEMTs , Biosensors , Long-term stability , botulinum toxins
Journal title :
Sensors and Actuators B: Chemical
Serial Year :
2010
Journal title :
Sensors and Actuators B: Chemical
Record number :
1438185
Link To Document :
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