Temperature characterization of silicon substrates for gas sensors by Raman spectroscopy

The local temperature of three silicon-based hotplate sensor designs has been measured by looking at the Raman band wavenumber of Si. Characteristic temperature/applied voltage curves have been drawn. The accuracy of the method has been estimated to be better than 10 K. For a given applied voltage, temperature differences were observed depending on the measurement point. These differences were always lower than 20 K for a temperature of 800 K.