Determination of the sensitive layer temperature of the adsorption semiconductor gas sensor

Dependence of the sensor temperature in a static atmosphere on its heater power consumption was obtained by means of a set of substances with known melting-points. The temperature field in a space around the sensor was investigated at different values of the heater power consumption. On basis of obtained data the theoretical evaluation of the sensitive layer temperature of the sensor in its working mode (i.e. in the presence of the analyzed gas flow) has been done. mental verification of the sensor temperature calculation results was carried out.