Characterization of ozone sensors based on WO3 reactively sputtered films: influence of O2 concentration in the sputtering gas, and working temperature

We report on electrical responses of tungsten oxide thin film ozone sensors based on a tungsten trioxide (WO3)/tin oxide (SiO2)/Si structure with interdigitated Pt electrodes. The influence of O2 concentration in the sputtering gas and working temperature of the sensor are investigated. Sensitivity to ozone increases with O2 content in the sputtering gas. It reaches its highest value for sensors fabricated with 50% O2. For these sensors, the best ozone sensitivity and shortest response and recovery times are obtained at a working temperature of 523 K. Ozone sensitivity is compared to other ozone sensors.