A Discretization Scheme for an Extended Drift-Diffusion Model Including Trap-Assisted Phenomena

An extended drift-diffusion model is considered to account for the kinetics of electrons trapped in defect states within a semiconductor material. A discretization scheme based on Newton–Krylov iterations and mixed finite volumes is then proposed and applied to the model, even in the presence of Schottky contacts (i.e., Robin-type boundary conditions). Numerical results concerning the simulation of an electro-optical device in several working conditions are presented last.