Author/Authors :
Zhao، نويسنده , , Yuwen and Wang، نويسنده , , Wenjing and Yun، نويسنده , , Feng and Xu، نويسنده , , Ying and Liao، نويسنده , , Xianbo and Ma، نويسنده , , Zhixun and Yue، نويسنده , , Guozhen and Kong، نويسنده , , Guanglin، نويسنده ,
Abstract :
An improved pulsed rapid thermal annealing (PRTA) has been used for the solid-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550°C thermal bias/1-s 850°C thermal pulse. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD). The results indicate that this PRTA is a suitable post-crystallization technique for fabricating large-area poly-Si films on low-cost substrate.
Keywords :
Pulsed rapid thermal annealing (PRTA) , Polycrystalline Si film , A-Si film , Solid-phase crystallization (SPC)
